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Mar 9, 2020 Technical Specifications KDL-46HX753 is necessary to check the serviceability of all power power switches (K15A50D, SFAF508G, K8A50D, 

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Datasheet, PDF. Dongguan City Niuhang E List of Unclassifed Man List of Unclassifed Man OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS. Galaxy Semi-Conductor H Changzhou Shunye Electr Bilateral Voltage triggered Switch Breakover Voltage:95-280Volts. SIDACs feature glass-passivated junctions to ensure a rugged and dependable. ATmega48/V/88/V/168/V 2018 Microchip Technology Inc. Data Sheet Complete DS40002074A-page 2 – Six PWM channels – 8-channel 10-bit ADC in TQFP and QFN/MLF package TK15A50D Data sheet/English[Nov,2013] PDF: 249KB Application Note Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020] PDF: 3593KB Access Google Sheets with a free Google account (for personal use) or Google Workspace account (for business use). TK15A50D2013-11-014DRAIN-SOURCE VOLTAGE VDS (V)CAPACITANCE – VDSCASE TEMPERATURE Tc (°C)PD – TcDRAIN-SOURCE VOLTAGE VDS (V)IDR – VDSCASE TEMPERATURE Tc (°C) datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes and other semiconductors.

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Type Designator: TK10A50D. Marking Code: K10A50D. Type of Transistor: MOSFET. Type of Control Channel: N -Channel. Maximum Power Dissipation (Pd): 45 W. Maximum Drain-Source Voltage |Vds|: 500 V. HMC788A: 0.01 GHz to 10 GHz, MMIC, GaAs, pHEMT RF Gain Block Data Sheet (Rev.

Toshiba Semiconductor.

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AS (Note 5 150 ch −55 to 150 T stg Symbol Max R 2.5 th (ch-c) R 62.5 th (ch-a) = 25°C (initial 4.1 mH Ω TK15A50D Unit Gate A 2: Drain 3: Source W mJ JEDEC ― A JEITA SC-67 mJ TOSHIBA 2-10U1B °C Weight : 1.7 g (typ.) °C Unit °C/W °C Page 2. K15A50D Datasheet (PDF) Download Datasheet. Part No. K15A50D.

Datasheet. Electronics Description. Toshiba Semiconductor. K15A50D. TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOS) Search Partnumber : Start with "K15 A50D " - Total : 434 ( 1/22 Page) Knox Semiconductor, Inc. K15 0.

K15A50 D. TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOS) Search Partnumber : Start with "K15 A50 " - Total : 434 ( 1/22 Page) Knox Semiconductor, Inc. K15 0. K15A500 – TK15A500. www.DataSheet.co.kr TK15A500 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK15A500 Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 500 V) Enhancement mode: Vth = K15A50D Datasheet – 500V, N-ch MOSFET – Toshiba. This is one of the MOSFET types.

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K15a500 data sheet

This is a kind of the transistor.

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Equivalent. Type Designator: TK10A50D. Marking Code: K10A50D. Type of Transistor: MOSFET.

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www.DataSheet.co.kr TK15A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK15A50D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 500 V) Enhancement mode: Vth = K15A50D Data, TK15A50D, Toshiba Semiconductor, K15A50D Datasheet, K15A50D PDF, 日本語, 互換, ピン配置, 回路. 2-16C1B. Weight : 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the.